3 nm
Samsung will reportedly make part of Nvidia's next memory chips on TSMC's 3 nm process
Samsung will reportedly build part of Nvidia's next memory chips on TSMC's 3 nm process. Seoul Economic Daily reported it on Sunday, and Reuters carried the story.
What happened
The part is the base die, the bottom layer of a high-bandwidth memory stack. Nvidia's custom design, called NVHBM, moves the memory controller into that die. The paper says Nvidia asked Samsung, SK Hynix and Micron to make it with TSMC. Samsung reportedly agreed after an internal review. It would be Samsung's first time working with TSMC on making HBM. None of the companies has confirmed the report.
Nvidia says NVHBM gives up to 30% more memory bandwidth than standard HBM4E. Samsung is reportedly checking whether its own foundry could step in if TSMC runs short.
Read the transcript
Samsung will reportedly build part of Nvidia's next memory chips on TSMC's 3 nm process. Seoul Economic Daily reported it on Sunday. Reuters carried the story. The part is the base die, the bottom layer of a memory stack. Nvidia's custom design moves the memory controller into that die. The paper says Nvidia asked Samsung, SK Hynix and Micron to make it with TSMC. Samsung reportedly agreed after an internal review. It would be Samsung's first time working with TSMC on making this memory. None of the companies has confirmed the report. Nvidia says its design gives up to 30% more bandwidth. We think this shows Nvidia setting the rules for its suppliers' factories. Rivals become partners when Nvidia asks. The bigger question is whether TSMC has room. Samsung is reportedly checking its own foundry as a backup.
That's your byte. Sources at sixtybytes.com.
Sources
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